Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop
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<jats:p> We investigate the effect of internal electric field in InGaN well layer of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) on efficiency droop behavior. The simulation results show that the internal electric field in InGaN well layers of Ga-polar LEDs is same as the direction of external electric field by forward bias voltage, resulting in a strong efficiency droop. However, N-polar LEDs show that the efficiency droop is drastically improved due to an increase of internal quantum efficiency and carrier injection efficiency by weakening the internal electric field with increasing the forward bias voltage and decrease of electron overflow. </jats:p>
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 51 (10), 100201-, 2012-10
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520572358494652928
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- NII論文ID
- 40019455423
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 024025751
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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