Statistical Prediction of Micro-Arcing in Radio-Frequency Plasmas for Manufacture of Semiconductor Device
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Abstract
<jats:p> A hard-arcing precursor that causes charging damage to semiconductor devices was found. The micro-arcing that occurs during the plasma etch process was statistically classified based on the optical intensity variation by using high-speed optical sensing. According to the level of effect on semiconductor device failure, the micro-arcing was categorized into soft-arcing I (8–11σ), soft-arcing II (11–15σ), and hard-arcing (over 15σ). Experimental results suggest that a sufficiently large increase in soft-arcing is directly associated with the occurrence of hard-arcing. By using this characteristic and based on a Gaussian distribution, hard-arcing was statistically predicted within 12 wafers. A mathematical model is also proposed to explain the same. This is the first control system capable of predicting and effectively restraining micro-arcing during the plasma process. </jats:p>
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 52 (6), 066202-, 2013-06
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520572358495015680
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- NII Article ID
- 40019678402
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL BIB ID
- 024644772
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- Crossref
- CiNii Articles