Physical origin of drive current enhancement in ultrathin Ge-on-insulator n-channel metal-oxide-semiconductor field-effect transistors under full ballistic transport
書誌事項
- タイトル別名
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- Physical origin of drive current enhancement in ultrathin Ge on insulator n channel metal oxide semiconductor field effect transistors under full ballistic transport
- Selected topics in Applied physics: Technology evolution for silicon nano-electronics
- Selected topics in Applied physics Technology evolution for silicon nano electronics
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収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (1), 2011-01
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520572358518521600
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- NII論文ID
- 40017446812
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
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- NDL書誌ID
- 10948099
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
- CiNii Articles