Band structure dependence of electron mobility in modulation-doped lattice-matched InAlAs/InGaAs/InAlAs heterostructures
Bibliographic Information
- Other Title
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- Band structure dependence of electron mobility in modulation doped lattice matched InAlAs InGaAs InAlAs heterostructures
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 49 (8), 084303-, 2010-08
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520572358587274496
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- NII Article ID
- 40017253794
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL BIB ID
- 10793689
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- Crossref
- CiNii Articles