Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application
書誌事項
- タイトル別名
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- Structure Materials and Shape Optimization of Magnetic Tunnel Junction Devices Spin Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application
- Selected Topics in Applied Physics(4)Magnetization Dynamics in Spintronic Structures and Devices
- Selected Topics in Applied Physics 4 Magnetization Dynamics in Spintronic Structures and Devices
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コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
収録刊行物
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- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
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Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (5A), 3835-3841, 2006-05
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520572359357439744
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- NII論文ID
- 40007248537
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- NII書誌ID
- AA10457675
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 7907666
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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