Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures

Details 詳細情報について

• CRID

  1520573330513393152

• NII Article ID

  10030593368

• NII Book ID

  AA12295133

• ISSN

  18820778

• NDL BIB ID

  023672823

• Web Site

  http://id.ndl.go.jp/bib/023672823

  https://ndlsearch.ndl.go.jp/books/R000000004-I023672823

• Text Lang

  en

• NDL Source Classification

  • ZM35(科学技術--物理学)

• Data Source

  • NDL
  • CiNii Articles