Characteristics of metal-oxide-semiconductor field-effect transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si stack structures formed by remote plasma technique
Bibliographic Information
- Other Title
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- Characteristics of metal oxide semiconductor field effect transistors with HfO2 SiO2 Si and HfO2 SiOxNy Si stack structures formed by remote plasma technique
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 47 (8), 6196-6199, 2008-08
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520853832432559360
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- NII Article ID
- 40016210979
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 9621518
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles