Effect of O2 gas during inductively coupled O2/Cl2 plasma etching of Mo and HfO2 for gate stack patterning

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  • Effect of O2 gas during inductively coupled O2 Cl2 plasma etching of Mo and HfO2 for gate stack patterning
  • Special issue: Dry process
  • Special issue Dry process

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コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

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