Superior reliability of gate-all-around polycrystalline silicon thin-film transistors with vacuum cavities next to gate oxide edges
Bibliographic Information
- Other Title
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- Superior reliability of gate all around polycrystalline silicon thin film transistors with vacuum cavities next to gate oxide edges
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Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (1), 014202-, 2011-01
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520853832854848384
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- NII Article ID
- 40017446835
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL BIB ID
- 10948983
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- Crossref
- CiNii Articles
