Compact hot-electron induced oxide trapping charge and post-stress drain current modeling for buried-channel p-type metal-oxide-semiconductor field-effect-transistors

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  • Compact hot electron induced oxide trapping charge and post stress drain current modeling for buried channel p type metal oxide semiconductor field effect transistors

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コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

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