Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures
Bibliographic Information
- Other Title
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- Effects of Si layer thickness on solid phase crystallization of stacked Ge Si SiO2 structures
- Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials
- Special issue Active matrix flatpanel displays and devices TFT technologies and FPD materials
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 48 (3), 2009-03
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520853834256382464
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- NII Article ID
- 40016500939
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 10191531
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
