Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition
Bibliographic Information
- Other Title
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- Room Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed Laser Deposition
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Journal
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- Japanese journal of applied physics. Part 2, Letters & express letters
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Japanese journal of applied physics. Part 2, Letters & express letters 45 (17-19), L457-459, 2006-05
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520854805352652160
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- NII Article ID
- 10018157388
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- NII Book ID
- AA11906093
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- ISSN
- 00214922
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- NDL BIB ID
- 7926142
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
