Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n⁺/p Diode Achieved by Implantation and Excimer Laser Annealing
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Journal
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- Applied physics express : APEX
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Applied physics express : APEX 6 (10), 2013-10
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1521136280996372608
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- NII Article ID
- 40019840909
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- NII Book ID
- AA12295133
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- ISSN
- 18820778
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- NDL BIB ID
- 024954592
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
