Electrical Properties of Ultrathin SiO₂ Layer Deposited at 50℃ by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition
Search this article
Journal
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- Applied physics express : APEX
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Applied physics express : APEX 5 (2), 2012-02
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1522262180675057152
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- NII Article ID
- 10030155171
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- NII Book ID
- AA12295133
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- ISSN
- 18820778
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- NDL BIB ID
- 023454278
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
