Raman spectroscopic stress evaluation of femtosecond-laser-modified region inside 4H-SiC
書誌事項
- タイトル別名
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- Raman spectroscopic stress evaluation of femtosecond laser modified region inside 4H SiC
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説明
A femtosecond (fs)-laser-modified region inside single-crystal silicon carbide was studied by micro-Raman spectroscopy. Higher and lower peak energy shifts of the transverse optical (TO) phonon mode, which correspond to compressive and tensile stresses, were observed. Mappings of peak energies and spectral widths of the TO phonon mode showed a clear correspondence with the distributions of strained layers observed by transmission electron microscopy. The maximum compressive and tensile stresses were estimated to be 1.4 and 0.4 GPa, respectively. This result indicates that the periodic strained layers contain many nano-voids which are formed by nano-explosions induced by fs laser irradiation.
収録刊行物
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- Applied physics express : APEX
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Applied physics express : APEX 3 (1), 016603-, 2010-01
Tokyo : Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1523106605189982720
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- NII論文ID
- 10027013184
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- NII書誌ID
- AA12295133
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- ISSN
- 18820778
- 18820786
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- NDL書誌ID
- 10522390
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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