Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

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Applied physics express : APEX

Applied physics express : APEX 6 (7), 075504-, 2013-07

Tokyo : Japan Society of Applied Physics

CRID

1523106605624981632
NII論文ID

10031187909
NII書誌ID

AA12295133
ISSN

18820778

18820786

http://id.crossref.org/issn/18820786
DOI

10.7567/apex.6.075504
NDL書誌ID

024706474
Web Site

https://ndlsearch.ndl.go.jp/books/R000000004-I024706474

http://stacks.iop.org/1882-0786/6/i=7/a=075504/pdf
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en
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