High-Quality AlN Layer Homoepitaxially Grown on Nitrided a-Plane Sapphire Using a Ga-Al Flux

Details 詳細情報について

• CRID

  1523388079980196096

• NII Article ID

  10031199846

• NII Book ID

  AA12295133

• ISSN

  18820778

• NDL BIB ID

  024863877

• Web Site

  http://id.ndl.go.jp/bib/024863877

  https://ndlsearch.ndl.go.jp/books/R000000004-I024863877

• Text Lang

  en

• NDL Source Classification

  • ZM35(科学技術--物理学)

• Data Source

  • NDL
  • CiNii Articles