SOR Lithography : Lithography Technology :
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- HOSOKAWA,Terno
- NTT LSI Laboratories
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- HAYASAKA,Toa
- NTT LSI Laboratories
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- YOSHIHARA,Hideo
- NTT LSI Laboratories
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- ISHIHARA,Sunao
- NTT LSI Laboratories
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- KITAYAMA,Toyoki
- NTT LSI Laboratories
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説明
An SOR facility has been built at the NTT LSI laboratories, and includes an injector linac, a normalconducting accelerating ring (NAR) and a superconducting compact storage ring (Super-ALIS) fully dedicated to X-ray lithography, A 45 mA electron beam has been stored at 600 MeV in Super-ALIS with a low-energy-one-pulse-injection scheme. The beam line, the stepper and X-ray masks have been studied and evaluated through experimental device fabrication. This paper overviews the present status of SOR lithography technologies at the NTT LSI laboratories.
収録刊行物
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- JJAP series
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JJAP series 3 72-75, 1989-12-30
Japanese Journal of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1540291245330846464
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- NII論文ID
- 110003912701
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- NII書誌ID
- AA11020413
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- 本文言語コード
- en
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- データソース種別
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- NDLデジコレ(旧NII-ELS)
- CiNii Articles