Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology :

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Ion beam etching (IBE) of GaAs with a source gas of Cl_2 or Ar was carried out at a low energy ringing from 5 to 130 eV by using an electron-beam-excited-plasma system, and residual defect centers were investigated by means of deeplevel transient spectroscopy(DLTS).Foul kinds of defect centers labeled L1 L2, L3, L5 with activation energies of 0.31, 0.45, 0.58, 0.48 eV, respectively, were resolved. Three of them were associated with damages induced by IBE and it was found that they have different thresholds for their generation, i.e., 60, 40 and 20 eV for L1, L2 and L3, respectively. It is necessary to reduce ion energy to less than 20 eV for perfect damage-free IBE of GaAs.

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  • JJAP series

    JJAP series 3 249-253, 1989-12-30

    Japanese Journal of Applied Physics

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