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Development of Aluminum sputter profile simulation including surface diffusion model
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- YAMADA Hiroaki
- ULSI Device Development Laboratories, NEC Corporation
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- KANEKO Hirokatsu
- ULSI Device Development Laboratories, NEC Corporation
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- YAMADA Yoshiaki
- ULSI Device Development Laboratories, NEC Corporation
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- OHTA Toshiyuki
- ULSI Device Development Laboratories, NEC Corporation
Bibliographic Information
- Other Title
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- 表面拡散モデルを含むアルミスパッタ形状シミュレーションシステムの開発
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Description
We have developed a practical aluminum sputter system which is composed of a trajectory calculation module using Monte Carlo(MC) method, a surface diffusion module, and a deposition profile module. In the system, the string model is utilized as the common data structure for simplifying interface. The surface diffusion model is found indispensable for aluminum. The adjusted surface diffusion coefficient with the activation energy of 12.4(kJ/mole) is found about one million times as large as the bulk at 573K.
Journal
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- Technical report of IEICE. VLD
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Technical report of IEICE. VLD 96 (258), 1-5, 1996-09-26
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1570009752432026240
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- NII Article ID
- 110003294372
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- NII Book ID
- AN10013323
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- Text Lang
- ja
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- Data Source
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- CiNii Articles