Electromigration test under high frequency pulsed current using on- chip pulse generator

Bibliographic Information

Other Title
  • オンチップパルスジェネレータを用いた高周波パルス電流によるEM評価

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Description

The electromigration (EM) test using on-chip-generated pulsed current was performed.This test system makes the EM test at high frequencies (> 100 MHz) reliable because of little distortion of waveforms.The EM reliability of AlSiCu interconnect under uni- directional pulsed current (pulsed DC) stress was investigated from the point of its dependence on the pulse frequency and the duty factor,in 30 MHz -350 MHz frequency range.In this frequency range,the EM lifetime was found to be approximately constant,which was about 50 times longer at 0.4 duty than the constant DC lifetime.The EM lifetime showed a strong dependence on the duty factor,and the duty factor exponent was found to be 4.4±1.0.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 94 (180), 67-72, 1994-07-25

    The Institute of Electronics, Information and Communication Engineers

Keywords

Details 詳細情報について

  • CRID
    1570009752531169536
  • NII Article ID
    110003310212
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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