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Statistical Monte Carlo simulations for dielectric breakdown of oxide thin films: Effect non-uniformity of electron trap generation

1 Citations

UENO S.

Journal

Proc. 1999 Int. Conf. on Simulations of Semiconductor Processing and Devices

Proc. 1999 Int. Conf. on Simulations of Semiconductor Processing and Devices 119-122,

Citations (1)*help

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Details 詳細情報について

CRID

1570291226446608256
NII Article ID

20000107008
Data Source
- CiNii Articles

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