Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's
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- KAWANAKA Shigeru
- Advanced Semiconductor Device Lab., R&D Center
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- ONGA Shinji
- Advanced Semiconductor Device Lab., R&D Center
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- OKADA Takako
- Advanced Semiconductor Device Lab., R&D Center
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- OOSE Michihiro
- Environmental Engineering Lab., R&D Center
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- IINUMA Toshihiko
- Microelectronics Engineering Lab., Toshiba Corporation
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- SHINO Tomoaki
- Advanced Semiconductor Device Lab., R&D Center
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- YAMADA Takashi
- Advanced Semiconductor Device Lab., R&D Center
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- YOSHIMI Makoto
- Advanced Semiconductor Device Lab., R&D Center
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- WATANABE Shigeyoshi
- Advanced Semiconductor Device Lab., R&D Center
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説明
Anomalous leakage current which flows between source and drain in thin film SOI MOSFET's is investigated. It is confirmed that the leakage current is caused by enhanced diffusion of the source/drain dopants along the LOCOS-induced crystal defects. Stress analysis by 2D simulation reveals that thinning a buried-oxide effectively suppresses deformation of an SOI film associated with over-oxidation during LOCOS. It is experimentally confirmed that using a SIMOX substrate which has a thinner buried-oxide causes no noticeable deformation of the SOI film nor anomalous leakage current.
収録刊行物
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- IEICE transactions on electronics
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IEICE transactions on electronics 82 (7), 1341-1346, 1999-07-25
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詳細情報 詳細情報について
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- CRID
- 1570291227388399616
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- NII論文ID
- 110003220789
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- NII書誌ID
- AA10826283
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- ISSN
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles