Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's

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説明

Anomalous leakage current which flows between source and drain in thin film SOI MOSFET's is investigated. It is confirmed that the leakage current is caused by enhanced diffusion of the source/drain dopants along the LOCOS-induced crystal defects. Stress analysis by 2D simulation reveals that thinning a buried-oxide effectively suppresses deformation of an SOI film associated with over-oxidation during LOCOS. It is experimentally confirmed that using a SIMOX substrate which has a thinner buried-oxide causes no noticeable deformation of the SOI film nor anomalous leakage current.

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詳細情報 詳細情報について

  • CRID
    1570291227388399616
  • NII論文ID
    110003220789
  • NII書誌ID
    AA10826283
  • ISSN
    09168524
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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