Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's

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Description

Anomalous leakage current which flows between source and drain in thin film SOI MOSFET's is investigated. It is confirmed that the leakage current is caused by enhanced diffusion of the source/drain dopants along the LOCOS-induced crystal defects. Stress analysis by 2D simulation reveals that thinning a buried-oxide effectively suppresses deformation of an SOI film associated with over-oxidation during LOCOS. It is experimentally confirmed that using a SIMOX substrate which has a thinner buried-oxide causes no noticeable deformation of the SOI film nor anomalous leakage current.

Journal

  • IEICE transactions on electronics

    IEICE transactions on electronics 82 (7), 1341-1346, 1999-07-25

    The Institute of Electronics, Information and Communication Engineers

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Details 詳細情報について

  • CRID
    1570291227388399616
  • NII Article ID
    110003220789
  • NII Book ID
    AA10826283
  • ISSN
    09168524
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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