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Gas Phase Reaction Kinetics in Mercury-Photosensitized Decomposition of SiH<SUB>4</SUB>
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- Kamisako Koichi
- Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture & Technology
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- Imai Toshio
- Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture & Technology
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- Tarui Yasuo
- Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture & Technology
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Description
The gas phase reaction in a mercury-sensitized decomposition of SiH4 under usual conditions for photo-CVD of a-Si:H was analyzed by means of mass spectroscopy. Reaction rates, i.e., the decomposition rate of SiH4 and the generation rates of Si2H6 and Si3H8, were measured. The reaction mechanism is summarized in twelve reaction steps, and rate equations were derived to explain substantially the obtained experimental results. Based on the rate equations, some rate constants were evaluated. The effect of H2 dilution of a chemical reaction was also discussed.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 27 (6), 1092-1095, 1988
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1570291227434060416
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- NII Article ID
- 110003908188
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- NII Book ID
- AA10457675
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- Text Lang
- en
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- Data Source
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- CiNii Articles
