A Simple Determination Method for the Source and Drain Resistances in the Ultra-Short Schottky-Gate FETs

1 Citations 6 References

Bibliographic Information

Other Title
  • 超微細ショットキー・ゲートFETのソース及びドレイン抵抗の簡易測定

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Description

A new method, "Vf method", is proposed to accurately evaluate the parasitic source and drain resistances (Rs, Rd) in Schottky-gate FETs using simple DC-measurements. The method is based on an improved gate-probing technique, which is effective even if a tested device gate has a relatively large ideality factor n larger than 1.2. And the method can evaluate the values of the Rs and Rd simply and accurately even if the device has an ultra-short gate-length Lg less than 0.15μm, because it applies a forward turn-on voltage (Vf) to the gate in order to reduce inhomogeneities in the gate current density characteristics (i.e. n-factor and apparent barrier height Φ_B) along the gate length.

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Details 詳細情報について

  • CRID
    1570291227453977344
  • NII Article ID
    110003189248
  • NII Book ID
    AN10013185
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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