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Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2
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- HIGUCHI Hideyo
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- NAMIZAKI Hirofumi
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- OOMURA Etsuji
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- HIRANO Ryoichi
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- SAKAKIBARA Yasushi
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- SUSAKI Wataru
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- FUJIKAWA Kyoichiro
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
Search this article
Journal
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- Japanese journal of applied physics. Supplement
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Japanese journal of applied physics. Supplement 22 (1), 307-310, 1983-02-28
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1570291227510252416
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- NII Article ID
- 110003953995
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- NII Book ID
- AA10457686
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles