Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2

  • HIGUCHI Hideyo
    LSI Research and Development Laboratory, Mitsubishi Electric Corporation
  • NAMIZAKI Hirofumi
    LSI Research and Development Laboratory, Mitsubishi Electric Corporation
  • OOMURA Etsuji
    LSI Research and Development Laboratory, Mitsubishi Electric Corporation
  • HIRANO Ryoichi
    LSI Research and Development Laboratory, Mitsubishi Electric Corporation
  • SAKAKIBARA Yasushi
    LSI Research and Development Laboratory, Mitsubishi Electric Corporation
  • SUSAKI Wataru
    LSI Research and Development Laboratory, Mitsubishi Electric Corporation
  • FUJIKAWA Kyoichiro
    LSI Research and Development Laboratory, Mitsubishi Electric Corporation

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Details 詳細情報について

  • CRID
    1570291227510252416
  • NII Article ID
    110003953995
  • NII Book ID
    AA10457686
  • ISSN
    00214922
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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