Issues and Perspectives in Low-k Dielectric Technology and its Impact on Device Performance

15 References

Bibliographic Information

Other Title
  • Low-k 層間絶縁膜技術の今後の展望とデバイス適用効果

Search this article

Description

A low dielectric constant ILD technology has become an issue of paramount importance in reducing interconnect capacitance for high performance and low power ULSIs. Use of SiOF can bring the relative dielectric constant (k) down to 3.3-3.7 and is in use in state-of-the-art 0.35micron generation LSIs. Several organic materials such as parylene-F,N and F-doped PI have been reported for further k reduction (k=2-3). Moreover, recently, a gas-dielectric interconnect process which can potentially reduce k to almost the minimum physical value possible, 1.0 has been proposed. In this paper, several engineering issues and perspectives in various low-k schemes are presented, and its impact on improvement in device performance is discussed.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 96 (226), 45-50, 1996-08-23

    The Institute of Electronics, Information and Communication Engineers

References(15)*help

See more

Keywords

Details 詳細情報について

  • CRID
    1570291227512654464
  • NII Article ID
    110003309664
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

Report a problem

Back to top