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Issues and Perspectives in Low-k Dielectric Technology and its Impact on Device Performance
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- SHIBATA Hideki
- ULSI Process Engineering Lab. TOSHIBA Corporation
Bibliographic Information
- Other Title
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- Low-k 層間絶縁膜技術の今後の展望とデバイス適用効果
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Description
A low dielectric constant ILD technology has become an issue of paramount importance in reducing interconnect capacitance for high performance and low power ULSIs. Use of SiOF can bring the relative dielectric constant (k) down to 3.3-3.7 and is in use in state-of-the-art 0.35micron generation LSIs. Several organic materials such as parylene-F,N and F-doped PI have been reported for further k reduction (k=2-3). Moreover, recently, a gas-dielectric interconnect process which can potentially reduce k to almost the minimum physical value possible, 1.0 has been proposed. In this paper, several engineering issues and perspectives in various low-k schemes are presented, and its impact on improvement in device performance is discussed.
Journal
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- Technical report of IEICE. SDM
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Technical report of IEICE. SDM 96 (226), 45-50, 1996-08-23
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1570291227512654464
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- NII Article ID
- 110003309664
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- NII Book ID
- AN10013254
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- Text Lang
- ja
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- Data Source
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- CiNii Articles