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Structural Characterization of a Bonded Silicon-on-Insulator Layer with Voids
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- Usami Akira
- Department of Electrical and Computer Engineering,Nagoya Institute of Technology
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- Ichimura Masaya
- Department of Electrical and Computer Engineering,Nagoya Institute of Technology
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- Nakai Takahisa
- Department of Electrical and Computer Engineering,Nagoya Institute of Technology
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- Ishigami Shun-ichiro
- Mitsubishi Materials
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- Wada Takao
- Mitsubishi Materials
Bibliographic Information
- Other Title
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- 貼り合わせSOIウェーハのボイド領域の結晶性評価
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Description
Crystalline quality in a void region of a bonded silicon-on- insulator(SOI)wafer is evaluated by the micro-Raman spectroscopy and the non-contact laser-beam induced conductivity(LBIC) measurement.Down shift and broadening of the Raman peak are observed at the edge of the void,while spectra within the void are little different from those in the outside of the void.The LBIC signal intensity takes a minimum at the void edge.These results show that the SOI layer is deformed plastically.rather than elastically at the boundary of the void.
Journal
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- Technical report of IEICE. SDM
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Technical report of IEICE. SDM 93 (368), 91-94, 1993-12-09
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1570291227514063744
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- NII Article ID
- 110003309978
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- NII Book ID
- AN10013254
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- Text Lang
- ja
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- Data Source
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- CiNii Articles
