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Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
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- MAKIMOTO Toshiki
- NTT Basic Research Laboratories, NTT Corporation
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- YAMAUCHI Yoshiharu
- NEL TechnoSupport
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- KIDO Takatoshi
- Shonan Institute of Technology
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- KUMAKURA Kazuhide
- NTT Basic Research Laboratories, NTT Corporation
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- TANIYASU Yoshitaka
- NTT Basic Research Laboratories, NTT Corporation
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- KASU Makoto
- NTT Basic Research Laboratories, NTT Corporation
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- MATSUMOTO Nobuo
- Shonan Institute of Technology
Search this article
Journal
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 322-323, 2004-09-15
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Details 詳細情報について
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- CRID
- 1570572700658187392
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- NII Article ID
- 10022538638
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- NII Book ID
- AA10777858
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- Text Lang
- en
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- Data Source
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- CiNii Articles
