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Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
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- TSUCHIYA Yoshinori
- Advanced LSI Technology Laboratory, Toshiba Corp.
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- KOYAMA Masato
- Advanced LSI Technology Laboratory, Toshiba Corp.
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- KOGA Junji
- Advanced LSI Technology Laboratory, Toshiba Corp.
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- NISHIYAMA Akira
- Advanced LSI Technology Laboratory, Toshiba Corp.
Search this article
Journal
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2005 844-845, 2005-09-13
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Details 詳細情報について
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- CRID
- 1570572700671607552
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- NII Article ID
- 10022543395
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- NII Book ID
- AA10777858
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- Text Lang
- en
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- Data Source
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- CiNii Articles
