Growth of Oxide Film on cu Contact Surface and Contact Reliability

TAMAI Terutaka, HAYASHI Tamotsu, NAKAMURA Takashi, OHSAKI Hiroshi

Bibliographic Information

Other Title

Cu接触面に対する酸化皮膜の成長則と接触信頼性

Description

Growth of oxide film formed on the copper surface by heating was studied from film thickness under wide range of temperature from room to 300℃. Growth law of the film was clarified from oxidation temperature, oxidation time, and film thickness. In the results, for the region lower temperature than approximate 100℃, parabolic law was found at the initial stage of oxidation and it was changed from third to fourth power law after the stage. For higher temperature than 100℃, linear law was found at the initial stage, and it changed from parabolic to third power law after this stage. Oxidation constants greatly changed at the boundary of the temperature. Furthermore, from the contact resistance measurement, effect of temperature on the contact resistance was not found at lower temperature than 100℃, but for higher temperature, it greatly affected.

Journal

IEICE technical report. EMD

IEICE technical report. EMD 95 (51), 7-12, 1995-05-19

The Institute of Electronics, Information and Communication Engineers

Keywords

Details 詳細情報について

CRID: 1570572702385511680

NII Article ID: 110003293300

NII Book ID: AN10383978

Text Lang: ja

Data Source

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