Seed-Less Melting Growth of Ge(Si) on Insulator : Large Grain Formation by Si Segregation

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Bibliographic Information

Other Title
  • 絶縁膜上におけるGe(Si)薄膜の溶融成長 : Si偏析効果による大粒径化

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Abstract

Melting growth of Si-doped Ge films, i.e., Ge(Si) films, on insulator has been investigated. After rapid-thermal annealing of Ge(Si) films in the temperatures region surrounded with the liquidus curve and solidus curve of the phase diagram of the SiGe system, SiGe crystals with large-grains (15-30μm) were formed. The Si concentration profiles in the grains showed peaks at the center of grains. The peak Si concentrations were almost the same as the Si concentrations along the solidus curve at the annealing temperature. These phenomena were explained based on the formation of Si-rich micro-crystals during annealing and subsequent Si-segregated lateral-growth during cooling.

Journal

  • Technical report of IEICE. OME

    Technical report of IEICE. OME 112 (19), 61-62, 2012-04-20

    The Institute of Electronics, Information and Communication Engineers

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Details

  • CRID
    1570572702904059008
  • NII Article ID
    110009564371
  • NII Book ID
    AN10013334
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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