Low-Temperature Growth of Thin Films of Al<SUB>2</SUB>O<SUB>3</SUB> by Sequential Surface Chemical Reaction of trimethylaluminum and H<SUB>2</SUB>O<SUB>2</SUB>

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  • Fan Jia-Fa
    The Institute of Physical and Chemical Research (RIKEN)
  • Sugioka Koji
    The Institute of Physical and Chemical Research (RIKEN)
  • Toyoda Koichi
    The Institute of Physical and Chemical Research (RIKEN)

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Hydrogen peroxide (H2O2) was used as the oxidant in a sequential surface-chemical-reaction-limited growth system to obtain high-quality thin films of Al2O3. It is observed that trimethylaluminum (TMA) reacts with H2O2 readily at temperatures as low as room temperature, resulting in the identical growth of Al2O3 wherever the reactants reach. The films are highly insulating and ideally uniform.

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