Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas (Hydrogen Azide)

Ishihara Ryouichi, Kanoh Hiroshi, Sugiura Osamu, Matsumura Masakiyo

Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas (Hydrogen Azide)

J-STAGE

Ishihara Ryouichi

Department of Physical Electronics, Tokyo Institute of Technology
Kanoh Hiroshi

Department of Physical Electronics, Tokyo Institute of Technology
Sugiura Osamu

Department of Physical Electronics, Tokyo Institute of Technology
Matsumura Masakiyo

Department of Physical Electronics, Tokyo Institute of Technology

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説明

Silicon nitride films were deposited at temperatures as low as 350°C by chemical vapor deposition using a new source gas, hydrogen azide (HN₃). Silicon nitride film deposited at 425°C was nitrogen-rich and showed hydrogen content of about 28 atomic%. The breakdown field strength was as high as 8.7 MV/cm and the resistivity was as high as 10¹⁵ Ω·cm. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transistor characteristics.