Novel Method of Threshold Voltage Control of Metal Gate CMOSFETs Using Channel Epitaxy
-
- KIM W. S.
- Semiconductor R&D Division, Samsung Electronics Co., Ltd.
-
- SONG S.
- Semiconductor R&D Division, Samsung Electronics Co., Ltd.
-
- KHANG Y.
- Semiconductor R&D Division, Samsung Electronics Co., Ltd.
-
- CHOE T. H.
- Semiconductor R&D Division, Samsung Electronics Co., Ltd.
-
- YOO J. Y.
- Semiconductor R&D Division, Samsung Electronics Co., Ltd.
-
- LEE N. I.
- Semiconductor R&D Division, Samsung Electronics Co., Ltd.
-
- FUJIHARA K.
- Semiconductor R&D Division, Samsung Electronics Co., Ltd.
-
- KANG H. K.
- Semiconductor R&D Division, Samsung Electronics Co., Ltd.
-
- MOON J. T.
- Semiconductor R&D Division, Samsung Electronics Co., Ltd.
この論文をさがす
収録刊行物
-
- Extended abstracts of the ... Conference on Solid State Devices and Materials
-
Extended abstracts of the ... Conference on Solid State Devices and Materials 2000 458-459, 2000-08-28
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1570854175236483712
-
- NII論文ID
- 10017198502
-
- NII書誌ID
- AA10777858
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles