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Growth of 3C-SiC film on Si substrate using Si_2(CH_3)_6
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- ASAMI Tadao
- Shibaura inst. of tech.
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- FUJIOKA Youichi
- Shibaura inst. of tech.
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- SHIMADA Hirokazu
- Shibaura inst. of tech.
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- YONEI Kenji
- Shibaura inst. of tech.
Bibliographic Information
- Other Title
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- 有機化珪素化合物(HMDS)を用いたSi基板上への3C-SiC薄膜の成長及び評価
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Journal
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- 電気学会基礎・材料・共通部門大会講演論文集 = Proceeding of Annual Conference of Fundamentals and Materials Society, IEE Japan
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電気学会基礎・材料・共通部門大会講演論文集 = Proceeding of Annual Conference of Fundamentals and Materials Society, IEE Japan 1999 564-, 1999-09-08
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Details 詳細情報について
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- CRID
- 1570854175296217088
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- NII Article ID
- 10016714330
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- NII Book ID
- AA11982604
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- Text Lang
- ja
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- Data Source
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- CiNii Articles