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Direct Bonding of Silicon Wafers
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- AKASE Katunori
- Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology
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- ENDOU Toshiaki
- Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology
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- HUKUDA Hisashi
- Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology
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- NOMURA Shigeru
- Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology
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- KASAI Hirotaka
- Matushita AVC Technology Inc.
Bibliographic Information
- Other Title
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- シリコンウェハの直接貼り合わせ接合
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Description
Direct bonding of Silicon wafers has been done under the several conditions of surface creaning treatments, hydrophilic or hydrohobic treatments and annealing temperatures. Optimum conditions for the best bonding are investigated. The mechanism of bonding is analyzed by the infrared scattering tomoggraphy, scanning electron microscope and infrared absorption spectroscopy. P-type wafer and n-type wafer are bonded to make p-n junctions and I-V characteristics are measured.
Journal
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- IEICE technical report. Component parts and materials
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IEICE technical report. Component parts and materials 95 (204), 1-6, 1995-08-04
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1570854177375906560
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- NII Article ID
- 110003199113
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- NII Book ID
- AN10012932
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- Text Lang
- ja
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- Data Source
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- CiNii Articles