Electromigration in gold line of GaAs IC

4 References
  • OHTA A.
    Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div.
  • YAJIMA K.
    Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div.
  • HIGASHISAKA N.
    Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div.
  • HEIMA T.
    Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div.
  • HISAKA T.
    Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div.
  • TANINO N.
    Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div.

Bibliographic Information

Other Title
  • GaAs IC Au配線におけるエレクトロマイグレーション

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Description

We have found voids in gold line of GaAs IC under high temperature DC bias test. The voids moved toward a cathode, in the opposite direction of electron flow. The velocity of a cathode edge is larger than that of an anode edge, bringing expansion of the void. The velocity of voids increased with the current density almost proportionally. The moving mechanisms of a void can be explained by assuming that gold atoms move toward an anode by electromigration. The activation energy of the void velocity was 0.84 eV at the cathode side. The GaAs IC failed at the almost same time as the voids appeared. The activation energy of MTF(mean time to failure)of the IC was 0.89 eV, which was nearly equal to that of the void velocity at the cathode edge of 0.84 eV.

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Details 詳細情報について

  • CRID
    1570854177379348864
  • NII Article ID
    110003200669
  • NII Book ID
    AN10012954
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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