Numerical Analysis of Tunneling Current due to Electric Field Concentration at the Gate Edge of MOS Structures

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Other Title
  • MOS構造ゲートエッジ部での電界集中によるトンネル電流増加の数値解析

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Description

Tunneling current enhancement due to electric field concentration at a gate edge is investigated by numerical calculation.The detailed current distribution and change of current-voltage(I-V)characteristics are calculated for several gate geometries different in curvature radius.It is shown that the current density at the gate edge varies by 3 orders of magnitude with the curvature radius from 30mn to 2mn.A very narrow area of 8mn at the curvature area is responsible for 80% of the total current between the gate and n^+ region.A calculated change in I-V characteristics due to the edge effect is found also in experimentally measured I-V curve of a poly-Si gate, SiO2/n^+-Si structure.

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Details 詳細情報について

  • CRID
    1570854177379932928
  • NII Article ID
    110003200345
  • NII Book ID
    AN10012954
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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