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Solid-State Electrochromic Device Consisting of Amorphous WO<SUB>3</SUB> and Various Thin Oxide Layers
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- Shizukuishi Makoto
- Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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- Shimizu Isamu
- Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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- Inoue Eiichi
- Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Description
A mixed oxide containing Cr2O3 was introduced into an amorphous WO3 solid-state electrochromic device (ECD) in order to improve its colour memory effect. The electrochromic characteristics were greatly affected by the chemical constituents of a dielectric layer on the a-WO3 layer. Particularly, long memory effect and low power dissipation were attained in a solid-state ECD consisting of a-WO3 and Cr2O3·V2O5(50 wt.%).<BR>Some electrochromic characteristics of the a-WO3/Cr2O3·V2O5 ECD and the role of V2O5 were investigated.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 19 (11), 2121-2126, 1980
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1570854177400554752
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- NII Article ID
- 110003896243
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- NII Book ID
- AA00690800
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles