Ion Implantation Technology By Eliminating Metal Sputtering Contamination For Forming 450℃-Annealed,Ultra Shallow Junctions

Bibliographic Information

Other Title
  • 450℃超低温接合形成のためのメタル汚染低減イオン注入技術

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Description

By using an ultra-high-vacuum ion implanter,we have found that the metal sputtering contamination occurring behind the wafer as well as in front of the wafer during ion implantation have profound effect on the enhancement of reverse-bias current. Eliminating such metal sputtering contamination,we could successfully form low-reverse-bias-current,ultra ltra-shallow junctions at an annealing temperature as low as 450℃.Self-aligned aluminum-gate MOSFET′s have been fabricated and their high speed p erformance has been demonstrated.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 93 (191), 9-16, 1993-08-23

    The Institute of Electronics, Information and Communication Engineers

Keywords

Details 詳細情報について

  • CRID
    1570854177466367232
  • NII Article ID
    110003309886
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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