Electromigration Hardness of Planer GaAs Schottky Barrier Diodes

5 References
  • YAJIMA Kotaro
    Semiconductor Group Manufacturing Technology DIV., Mitsubishi Electric Corporation
  • KASHIWA Takuo
    Optoelectoronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation
  • SASAKI Hajime
    Semiconductor Group Manufacturing Technology DIV., Mitsubishi Electric Corporation
  • KOMARU Makio
    Optoelectoronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation
  • YOSHIDA Naoto
    Optoelectoronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation
  • MIZUGUCHI Kiyoshi
    Semiconductor Group Manufacturing Technology DIV., Mitsubishi Electric Corporation

Bibliographic Information

Other Title
  • GaAsプレーナー形ショットキーダイオードのエレクトロマイグレーション耐性

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Description

Planer Schottky barrier diodes on GaAs substrate are applied in telecommunication systems, satellite broadcasting and in rader systems. The width of anode (Al Schottky diodes) lines are required to be fine for high frequency operation. Current density of 0.5 micron Al line generated by RF input signal is more than 1x10^6 A/cm^2. We estimated the electromigration hardness of Schottky barrier diodes using temperature and current accelerations tests. We confirmed that these Al lines have longer life time with electromigration more than conventional Al lines. We suppose that the longer life time is due to the effect of a multi-layer structure and a narrow Al line width.

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Details 詳細情報について

  • CRID
    1570854177467444352
  • NII Article ID
    110003301864
  • NII Book ID
    AN10013243
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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