High-Resolution Proximity Exposure through a Phase Shifter Mask

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説明

A simple method to fabricate fine lines of photoresist has been developed. The method utilizes a mask containing an equal-width line-and-space pattern of the half-wavelength phase shifter. A film of photoresist formed on a substrate is placed in close proximity to the mask and exposed through the mask by flooding with a beam of light. The beam, diffracted by the mask, produces an interference pattern, which extends long enough to expose the film patternwise. The film is then developed to form a resist pattern. An array of 0.2-μm-spaced, 0.1-μm-wide lines of a positive photoresist has been obtained by this method using the i-line with a peak intensity at the wavelength of 0.365 μm. Calculation based on a rigorous solution of the two-dimensional diffraction problem indicates that a high-contrast 0.1 μm line-and-space exposure using the i-line is feasible if the light is polarized.

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詳細情報 詳細情報について

  • CRID
    1571417127354494336
  • NII論文ID
    110003899873
  • NII書誌ID
    AA10457675
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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