High-Reliability Programming Technique Using Variable Word-Line Voltage for Flash Memories
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- MIYAMOTO Naoki
- Hitachi Device Engineering, Co., Ltd.
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- KAWAHARA Takayuki
- Central Research Laboratory, Hitachi Ltd.
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- SAEKI Syunichi
- Hitachi Device Engineering, Co., Ltd.
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- JYOUNO Yusuke
- Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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- KATO Masataka
- Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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- KIMURA Katsutaka
- Central Research Laboratory, Hitachi Ltd.
Bibliographic Information
- Other Title
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- フラッシュメモリにおける可変ワード線電圧を用いた高信頼化書込み技術
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Description
Variable word-line voltage electron-ejection (VVE) method is discussed for increasing the charge-to-breakedown by simulating the electron-election characteristics in flash memories of more than 256 Mbit. A simulation shows that VVE method reduce the maximum Fowler-Nordheim tunnel current density by 1.4 orders of magnitude compared to the conventional method. This is expected to triple the charge-to-breakdown.
Journal
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- Technical report of IEICE. SDM
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Technical report of IEICE. SDM 95 (380), 45-51, 1995-11-22
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1571698602396208000
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- NII Article ID
- 110003309695
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- NII Book ID
- AN10013254
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- Text Lang
- ja
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- Data Source
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- CiNii Articles
