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Reduction in Operation Voltage of Current Injection Type Infrared Light Emitter Formed with Erbium-Doped Silicon Suboxide
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- NAKA Yoshihiro
- Graduate School of Science and Technology, Kumamoto University
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- SONEDA Shinya
- Graduate School of Science and Technology, Kumamoto University
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- NAKANO Seiichi
- Graduate School of Science and Technology, Kumamoto University
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- HIKIDA Tsukuru
- Graduate School of Science and Technology, Kumamoto University
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- SUMIYOSHI Takeshi
- Graduate School of Science and Technology, Kumamoto University
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- TSUCHIYA Masahiro
- National Institute of Information and Communications Technology (NICT)
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- NAKAMURA Yusui
- Graduate School of Science and Technology, Kumamoto University
Bibliographic Information
- Other Title
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- エルビウム添加シリコン酸化膜を用いた電流注入型赤外発光素子の低電圧化
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Description
シリコンフォトニクス実現に向けた赤外発光素子の開発を目指し,エルビウム添加シリコン酸化膜を発光層とする素子を試作した.本研究では素子の動作電圧の低減を目的として,狭バンドギャップの発光層を用いるとともに,それをn型及びp型のワイドギャップ半導体で挟むp-i-n構造を提案し,作製・評価を行った.その結果,従来の報告と比較して約半分のしきい値電圧(10〜15V)において1.5μm帯の赤外発光を室温で確認した.
Journal
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- The transactions of the Institute of Electronics, Information and Communication Engineers. C
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The transactions of the Institute of Electronics, Information and Communication Engineers. C 93 (8), 264-265, 2010-08-01
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1571980077476681472
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- NII Article ID
- 110007681462
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- NII Book ID
- AA11412446
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- ISSN
- 13452827
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- Text Lang
- ja
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- Article Type
- journal article
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- Data Source
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- CiNii Articles
- KAKEN