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Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
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- OUCHI Kiyoshi
- Central Research Laboratory, Hitachi, Ltd.
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- MISHIMA Tomoyoshi
- Central Research Laboratory, Hitachi, Ltd.
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- MOCHIZUKI Kazuhiro
- Central Research Laboratory, Hitachi, Ltd.
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- OKA Tohru
- Central Research Laboratory, Hitachi, Ltd.
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- TANOUE Tomonori
- Central Research Laboratory, Hitachi, Ltd.
Search this article
Journal
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 1996 577-579, 1996-08-26
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Details 詳細情報について
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- CRID
- 1572261550125603712
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- NII Article ID
- 10017200327
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- NII Book ID
- AA10777858
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- Text Lang
- en
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- Data Source
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- CiNii Articles