Fabrcation of field emission array with hafnium nitride cathode
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- GOTOH Yasuhito
- Department of Electronic Science and Engineering, Kyoto University
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- SETOJIMA Noriyuki
- Department of Electronic Science and Engineering, Kyoto University
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- KANZAWA Taro
- Department of Electronic Science and Engineering, Kyoto University
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- KOJIMA Toshihiko
- Department of Electronic Science and Engineering, Kyoto University
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- FUJII Ryoichi
- Department of Electronic Science and Engineering, Kyoto University
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- TSUJI Hiroshi
- Department of Electronic Science and Engineering, Kyoto University
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- ISHIKAWA Junzo
- Department of Electronic Science and Engineering, Kyoto University
Bibliographic Information
- Other Title
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- 窒化ハフニウムを陰極とした電界放出電子源の作製
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Description
The properites of the transition metal nitrides meet the requirements for the cold cathode meterial. Among the transition metal nitrides, hafnium nitride has the lowest work function as tantalum nitride, and therefore, the material is considered to be a good cathode for electron emission. We deposited hafnium nitride thin film onto the silicon cone arrays, followed by depositions of insulating layer and gate electrode. Gate aperture was then fabricated, and the electron emission arrays were fabricated. The report also shows some typical examples of voltage-current characteristics.
Journal
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- IEICE technical report. Electron devices
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IEICE technical report. Electron devices 106 (200), 61-62, 2006-07-27
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1572261551845697024
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- NII Article ID
- 110004823311
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- NII Book ID
- AN10012954
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- Text Lang
- ja
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- Data Source
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- CiNii Articles
