Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry
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- FUJISAWA Toshimasa
- NTT Basic Research Laboratories
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- TARUCHA Seigo
- NTT Basic Research Laboratories
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収録刊行物
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 1995 198-200, 1995-08-21
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詳細情報 詳細情報について
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- CRID
- 1572543025101694080
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- NII論文ID
- 10017201664
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles
