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A Novel Explanation of Substrate Bias Dependent Dielectric Breakdown Behavior with Channel Quantization Effect in Ultrathin Oxide pMOSFETs
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- CHIANG Sinclair
- Central Research and Development Division, UMC
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- YOU J. W.
- Central Research and Development Division, UMC
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- LU C. T.
- Central Research and Development Division, UMC
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- LU M. F.
- Central Research and Development Division, UMC
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- HUANG-LU S.
- Central Research and Development Division, UMC
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- CHIEN S. C.
- Central Research and Development Division, UMC
Search this article
Journal
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2005 500-501, 2005-09-13
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Details 詳細情報について
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- CRID
- 1572543025509176576
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- NII Article ID
- 10022542370
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- NII Book ID
- AA10777858
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- Text Lang
- en
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- Data Source
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- CiNii Articles