A Novel Explanation of Substrate Bias Dependent Dielectric Breakdown Behavior with Channel Quantization Effect in Ultrathin Oxide pMOSFETs

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Details 詳細情報について

  • CRID
    1572543025509176576
  • NII Article ID
    10022542370
  • NII Book ID
    AA10777858
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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