Barrier Effects of Tungsten Infer-Layer for Aluminum Diffusion in Aluminum/Silicon Ohmic-Contact System

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説明

The barrier effects of tungsten inter-layers for aluminum diffusion have been studied in an aluminum/silicon ohmic-contact system, where the tungsten layers were deposited by chemical vapor deposition (CVD) and sputtering. Sintering was carried out at temperatures ranging from 450°C to 550°C and the interfacial reaction was then studied by 1.5 MeV He+ Rutherford backscattering spectroscopy. In the CVD tungsten infer-layer, no discernible reaction took place at each interface up to 500°C. However, reaction occurred at the aluminum-silicon interface in sputtered tungsten even at 450°C, and a WA112 compound was formed, indicating the achievement of a sufficient barrier effect in the CVD layer at 500°C. Tungsten diffused to the aluminum and/or the silicon at 550°C in both samples, and tungsten silicide layers were formed at the tungsten-silicon interface.

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